The transition to electric mobility, the modernization of the power grid, and the deployment of electronics in extreme environments are pushing today's wide-bandgap technologies — SiC and GaN — toward their limits. Diamond is the next material the physics points to, with an ultra-wide bandgap of 5.47 eV, high carrier mobility, and exceptional thermal conductivity. Our customers and partners are developing the diamond-based devices that could enable the next generation of power electronics.
Where diamond could fit
Diamond power devices are at an early stage of industrial development. The application areas our customers and prospects explore include:
Electric mobility. Power converters, on-board chargers, and capacitors for electric vehicles — where weight, compactness, and efficiency translate directly into vehicle range and total cost.
Power grid and energy conversion. High-voltage conversion stages where reducing losses and switching faster matter at the scale of an entire energy infrastructure.
Nuclear and radiation-hard environments. Decommissioning and monitoring systems in radioactive conditions where conventional semiconductors fail; satellite and space electronics exposed to cosmic radiation.
Aerospace and defense. Power and signal electronics that must operate at high temperature, under shock, or in thermally degraded environments.
Industrial extreme environments. Downhole electronics for oil and gas, geothermal drilling, and other applications where temperature and pressure exceed silicon's working range.
These are application hypotheses being explored by our customers — the device-level expertise belongs to them. Our role is to deliver the diamond substrates they need.
What we offer
Bulk boron-doped diamond substrates. Boron concentrations up to 10²¹ cm⁻³, the range used for heavily doped layers in diamond power devices.
Form factor. 2×2 cm² grown today, with an active roadmap toward 2-inch and 4-inch wafers.
Device architectures. Our substrates serve as the platform for the full range of diamond power device architectures — Schottky and PiN diodes, MOSFETs and JFETs in lateral or pseudo-vertical configurations, capacitor structures, and bipolar architectures combining p-type and n-type epitaxial layers added downstream by our customers.
Integration
The device fabrication flow starts with our diamond substrate. From there, our customers typically deposit their own p⁻ drift layers — and, for bipolar architectures, n-type epitaxial layers — then move through standard semiconductor process steps (lithography, plasma etching, dielectric passivation) and finish with ohmic contact formation. We collaborate with our customers to align our substrate specifications with their epitaxial flow and target device architecture.
Who this is for
Companies and laboratories developing diamond power devices — pure-play diamond electronics startups, R&D teams in established power semiconductor manufacturers, and research institutes building the foundations of an industrial diamond power electronics sector.
Maturity
Diamond power electronics are at an early stage of development. Most devices are at the demonstrator level today; pilot lines and pre-commercial production are starting to emerge across the ecosystem. Our role is to support the industrial ramp of our customers with high-quality boron-doped diamond substrates.
Let's discuss your roadmap
If your team is exploring diamond for power electronics — whether you already know your substrate specification, or you would like to understand what is achievable today — we welcome a 30-minute call.
